Nexperia B.V. N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology PSMN3R2-40YLBX

Description
120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 120 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 120 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage Optimized for 4.5 V gate drive utilizing NextPowerS3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap
  • N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology - PSMN3R2-40YLBX - Nexperia B.V.
    Nexperia B.V.
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    DigiKey
  • MOSFETs - 219294 - RS Components, Ltd.
    RS Components, Ltd.
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Description
120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 120 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 120 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage Optimized for 4.5 V gate drive utilizing NextPowerS3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap
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Datasheet
Datasheet Summary
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N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 package, qualified to 175 °C, with optimized NextPowerS3 Schottky-Plus technology for improved EMC performance and low gate charge. The device supports continuous drain current of 120 A at 25 °C, features avalanche ruggedness tested at 120 A, and is optimized for 4.5 V gate drive. The LFPAK56 package includes copper-clip and solder die attach for high board-level reliability, with exposed leads compatible with wave soldering.

Datasheet Summary
Powered by GS/AI

N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 package, qualified to 175 °C, with optimized NextPowerS3 Schottky-Plus technology for improved EMC performance and low gate charge. The device supports continuous drain current of 120 A at 25 °C, features avalanche ruggedness tested at 120 A, and is optimized for 4.5 V gate drive. The LFPAK56 package includes copper-clip and solder die attach for high board-level reliability, with exposed leads compatible with wave soldering.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology - PSMN3R2-40YLBX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology
PSMN3R2-40YLBX
N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology PSMN3R2-40YLBX
120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications. Features and benefits Optimized for improved EMC Performance 120 A continuous ID(max) rating Avalanche rated, 100% tested at IAS = 120 A Strong SOA (linear-mode) rating NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery' Low Qrr, QG and QGD for high system efficiency and low EMI designs Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage Optimized for 4.5 V gate drive utilizing NextPowerS3 Superjunction technology High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability Low parasitic inductance and resistance Applications Automation, control and instrumentation Autonomous systems, Robotics and Cobots DC-to-DC converters Brushless DC motor control Brushed motors Battery isolation Industrial load-switch and eFuse Inrush management, hotswap

120 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching applications.

Features and benefits

  • Optimized for improved EMC Performance
  • 120 A continuous ID(max) rating
  • Avalanche rated, 100% tested at IAS = 120 A
  • Strong SOA (linear-mode) rating
  • NextPowerS3 technology delivers 'superfast switching with soft body-diode recovery'
  • Low Qrr, QG and QGD for high system efficiency and low EMI designs
  • Schottky-Plus body-diode with low VSD, low Qrr, soft recovery and low IDSS leakage
  • Optimized for 4.5 V gate drive utilizing NextPowerS3 Superjunction technology
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
  • Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints providing excellent board level reliability
  • Low parasitic inductance and resistance

Applications

  • Automation, control and instrumentation
  • Autonomous systems, Robotics and Cobots
  • DC-to-DC converters
  • Brushless DC motor control
  • Brushed motors
  • Battery isolation
  • Industrial load-switch and eFuse
  • Inrush management, hotswap
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN3R2-40YLBXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN3R2-40YLBXDKR-ND
Single FETs, MOSFETs 1727-PSMN3R2-40YLBXDKR-ND
PSMN3R2-40YLB/SOT669 /LFPAK

PSMN3R2-40YLB/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN3R2-40YLBXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN3R2-40YLBXTR-ND
Single FETs, MOSFETs 1727-PSMN3R2-40YLBXTR-ND
PSMN3R2-40YLB/SOT669 /LFPAK

PSMN3R2-40YLB/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN3R2-40YLBXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN3R2-40YLBXCT-ND
Single FETs, MOSFETs 1727-PSMN3R2-40YLBXCT-ND
PSMN3R2-40YLB/SOT669 /LFPAK

PSMN3R2-40YLB/SOT669/LFPAK

Buy Now Datasheet
MOSFETs - 219294 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219294
MOSFETs 219294
N-Channel MOSFET, 40V, 3.2A, SOT-23

N-Channel MOSFET, 40V, 3.2A, SOT-23

Supplier's Site
MOSFETs - 219296 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219296
MOSFETs 219296
N-Channel MOSFET, 40V, 3.2A, SOT-23

N-Channel MOSFET, 40V, 3.2A, SOT-23

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN3R2-40YLBX 1727-PSMN3R2-40YLBXDKR-ND 219294
Product Name N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Single FETs, MOSFETs MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 120000 milliamps
VGS(off) 20 volts
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