Nexperia B.V. N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 PSMN1R6-25YLEX

Description
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Optimized for low RDSon / low I2R conduction losses LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint Low leakage <1 µA at 25 °C Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Applications Hot swap in 12 V - 20 V applications e-Fuse DC switch Load switch Battery protection
  • N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 - PSMN1R6-25YLEX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-PSMN1R6-25YLEXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R6-25YLEXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-PSMN1R6-25YLEXTR-ND - DigiKey
    DigiKey
  • MOSFETs - 219385 - RS Components, Ltd.
    RS Components, Ltd.
  • MOSFETs - 219387 - RS Components, Ltd.
    RS Components, Ltd.
  • Mosfet, N-Ch, 30V, 185A, Sot-669 Rohs Compliant Nexperia - 61AK9907 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Optimized for low RDSon / low I2R conduction losses LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint Low leakage <1 µA at 25 °C Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Applications Hot swap in 12 V - 20 V applications e-Fuse DC switch Load switch Battery protection
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Datasheet
Datasheet Summary
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N-channel 25 V ASFET for hotswap applications with enhanced safe operating area, in LFPAK56 (SOT669) package measuring 5.0 mm × 6.2 mm. Features low drain-source on-state resistance (1.68 mΩ typ. at 25 °C, VGS = 10 V), continuous drain current up to 185 A (limited by PCB and thermal design), and total power dissipation of 124 W. Junction temperature ranges from -55 °C to 175 °C. Includes copper-clip for low parasitic resistance and inductance, and is qualified for high reliability. Applications include hot-swap, e-fuse, DC switch, load switch, and battery protection.

Datasheet Summary
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N-channel 25 V ASFET for hotswap applications with enhanced safe operating area, in LFPAK56 (SOT669) package measuring 5.0 mm × 6.2 mm. Features low drain-source on-state resistance (1.68 mΩ typ. at 25 °C, VGS = 10 V), continuous drain current up to 185 A (limited by PCB and thermal design), and total power dissipation of 124 W. Junction temperature ranges from -55 °C to 175 °C. Includes copper-clip for low parasitic resistance and inductance, and is qualified for high reliability. Applications include hot-swap, e-fuse, DC switch, load switch, and battery protection.

Suppliers

Company
Product
Description
Supplier Links
N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 - PSMN1R6-25YLEX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56
PSMN1R6-25YLEX
N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 PSMN1R6-25YLEX
N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications. Features and benefits Fully optimized Safe Operating Area (SOA) for superior linear mode operation Optimized for low RDSon / low I2R conduction losses LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint Low leakage <1 µA at 25 °C Copper-clip for low parasitic inductance and resistance High reliability LFPAK package, qualified to 175 °C Applications Hot swap in 12 V - 20 V applications e-Fuse DC switch Load switch Battery protection

N-channel enhancement mode ASFET for hotswap with enhanced SOA in LFPAK56 package optimized for low RDSon and strong safe operating area, optimized for hot-swap, inrush and linear-mode applications.

Features and benefits

  • Fully optimized Safe Operating Area (SOA) for superior linear mode operation
  • Optimized for low RDSon / low I2R conduction losses
  • LFPAK56 package for applications that demand the highest performance and reliability in a 30 mm2 footprint
  • Low leakage <1 µA at 25 °C
  • Copper-clip for low parasitic inductance and resistance
  • High reliability LFPAK package, qualified to 175 °C

Applications

  • Hot swap in 12 V - 20 V applications
  • e-Fuse
  • DC switch
  • Load switch
  • Battery protection
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-PSMN1R6-25YLEXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R6-25YLEXCT-ND
Single FETs, MOSFETs 1727-PSMN1R6-25YLEXCT-ND
PSMN1R6-25YLE/SOT669 /LFPAK

PSMN1R6-25YLE/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R6-25YLEXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R6-25YLEXDKR-ND
Single FETs, MOSFETs 1727-PSMN1R6-25YLEXDKR-ND
PSMN1R6-25YLE/SOT669 /LFPAK

PSMN1R6-25YLE/SOT669/LFPAK

Buy Now Datasheet
Single FETs, MOSFETs - 1727-PSMN1R6-25YLEXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-PSMN1R6-25YLEXTR-ND
Single FETs, MOSFETs 1727-PSMN1R6-25YLEXTR-ND
PSMN1R6-25YLE/SOT669 /LFPAK

PSMN1R6-25YLE/SOT669/LFPAK

Buy Now Datasheet
MOSFETs - 219385 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219385
MOSFETs 219385
N-Channel MOSFET, 25V, 1.6A, SOT-23

N-Channel MOSFET, 25V, 1.6A, SOT-23

Supplier's Site
MOSFETs - 219387 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
219387
MOSFETs 219387
N-Channel MOSFET, 25V, 1.6A, SOT-23

N-Channel MOSFET, 25V, 1.6A, SOT-23

Supplier's Site
Mosfet, N-Ch, 30V, 185A, Sot-669 Rohs Compliant Nexperia - 61AK9907 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 185A, Sot-669 Rohs Compliant Nexperia
61AK9907
Mosfet, N-Ch, 30V, 185A, Sot-669 Rohs Compliant Nexperia 61AK9907
MOSFET, N-CH, 30V, 185A, SOT-669 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 185A, SOT-669 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey RS Components, Ltd. Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number PSMN1R6-25YLEX 1727-PSMN1R6-25YLEXCT-ND 219385 61AK9907
Product Name N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Single FETs, MOSFETs MOSFETs Mosfet, N-Ch, 30V, 185A, Sot-669 Rohs Compliant Nexperia
Package Type SOT669 SOT669 SC-100, SOT-669 LFPAK TO-3
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