Nexperia B.V. Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia PSMN3R5-40YSD

N-channel 40 V, 120 A MOSFET in LFPAK56 (SOT669) package, designed for high-performance power switching applications such as synchronous rectification and DC-to-DC converters. The device has a drain-source on-state resistance of 3.5 mΩ at 25 °C and 10 V gate-source voltage, and supports a maximum continuous drain current of 120 A with a total power dissipation of 115 W. It features an avalanche-rated structure tested at 120 A, a Schottky-Plus body diode with low forward voltage, and a wide safe operating area for linear mode operation. The junction temperature ranges from -55 °C to 175 °C, and the package uses a copper-clip, solder die-attach construction compatible with wave soldering.