Nexperia B.V. Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia PSMN3R5-40YSD

Description
MOSFET, N-CH, 40V, 120A, 115W, SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes
  • Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia - 79AC7199 - Newark, An Avnet Company
    Newark, An Avnet Company
Datasheet
Description
MOSFET, N-CH, 40V, 120A, 115W, SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes
Datasheet

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Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia - 79AC7199 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia
79AC7199
Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia 79AC7199
MOSFET, N-CH, 40V, 120A, 115W, SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40V, 120A, 115W, SOT669; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.1V; Power RoHS Compliant: Yes

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Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 79AC7199
Product Name Mosfet, N-Ch, 40V, 120A, 115W, Sot669; Transistor Polarity Nexperia
IDSS 120000 milliamps
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