Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: CoolGaN™
Package: Tape & Reel (TR) Cut Tape (CT)
Product Status: Active
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
GANFET N-CH Product overview: IGOT60R070D1AUMA3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IGOT60R070D1AUMA
N-Channel 600V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87
N-Channel 600V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87
N-Channel 600V 31A (Tc) 125W (Tc) Surface Mount PG-DSO-20-87
GANFET N-CH
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-IGOT60R070D1AUMA3 | 448-IGOT60R070D1AUMA3TR-ND | IGOT60R070D1AUMA3 | |
| Product Name | Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |
| Package Type | SOT3 | Tape & Reel (TR) | "20-PowerSOIC (0.433"", 11.00mm Width)" | Surface Mount |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 600 volts |