Infineon Technologies AG Single FETs, MOSFETs IPA50R950CEXKSA2

Description
N-Channel 500V 3.7A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-FP
Request a Quote Datasheet
Description
N-Channel 500V 3.7A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-FP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPA50R950CEXKSA2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPA50R950CEXKSA2-ND
Single FETs, MOSFETs IPA50R950CEXKSA2-ND
N-Channel 500V 3.7A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-FP

N-Channel 500V 3.7A (Tc) 25.7W (Tc) Through Hole PG-TO220-3-FP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA50R950CEXKSA2 - 1045728-IPA50R950CEXKSA2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA50R950CEXKSA2
1045728-IPA50R950CEXKSA2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA50R950CEXKSA2 1045728-IPA50R950CEXKSA2
Manufacturer: Infineon Technologies Win Source Part Number: 1045728-IPA50R950CEX KSA2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 13V Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 3.7A (Tc) Gate-Source Threshold Voltage: 3.5V @ 100μA Max Gate Charge: 10.5nC @ 10V Max Input Capacitance: 231pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 1.2A, 13V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045728-IPA50R950CEXKSA2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 13V
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3.7A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 100μA
Max Gate Charge: 10.5nC @ 10V
Max Input Capacitance: 231pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 1.2A, 13V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 2182994 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2182994
MOSFETs 2182994
Infineon MOSFET IPA50R950CEXKSA2

Infineon MOSFET IPA50R950CEXKSA2

Supplier's Site
MOSFETs - 2182993 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2182993
MOSFETs 2182993
Infineon MOSFET IPA50R950CEXKSA2

Infineon MOSFET IPA50R950CEXKSA2

Supplier's Site
MOSFETs - 2182994P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2182994P
MOSFETs 2182994P
Infineon MOSFET IPA50R950CEXKSA2

Infineon MOSFET IPA50R950CEXKSA2

Supplier's Site
Mosfet, N-Ch, 500V, 6.6A, To-220Fp; Transistor Polarity Infineon - 34AC1647 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 6.6A, To-220Fp; Transistor Polarity Infineon
34AC1647
Mosfet, N-Ch, 500V, 6.6A, To-220Fp; Transistor Polarity Infineon 34AC1647
MOSFET, N-CH, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 500V, 6.6A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:6.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET N-CH 500V 4.3A PG-TO220FP - 376-IPA50R950CEXKSA2 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 4.3A PG-TO220FP
376-IPA50R950CEXKSA2
MOSFET N-CH 500V 4.3A PG-TO220FP 376-IPA50R950CEXKSA2
MOSFET N-CH 500V 4.3A PG-TO220FP

MOSFET N-CH 500V 4.3A PG-TO220FP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPA50R950CEXKSA2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPA50R950CEXKSA2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPA50R950CEXKSA2
MOSFET N-CH 500V 3.7A TO220

MOSFET N-CH 500V 3.7A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPA50R950CEXKSA2-ND 1045728-IPA50R950CEXKSA2 2182994 34AC1647 376-IPA50R950CEXKSA2 IPA50R950CEXKSA2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA50R950CEXKSA2 MOSFETs Mosfet, N-Ch, 500V, 6.6A, To-220Fp; Transistor Polarity Infineon MOSFET N-CH 500V 4.3A PG-TO220FP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220 Full Pack TO-220; TO-220 TO-3; TO-220 TO-220; TO-220-3 Full Pack
V(BR)DSS 500 volts
PD 25700 milliwatts 25700 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
Unlock Full Specs
to access all available technical data