Infineon Technologies AG Silicon Carbide MOSFET Discretes IMBF170R450M1

CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package CoolSiC™ 1700 V, 450 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications. Summary of Features Optimized for fly-back topologies Extremely low switching loss 12 V / 0 V gate-source voltage compatible with fly-back controllers Fully controllable dV/dt for EMI optimization SMD package with enhanced creepage and clearance distances, > 7 mm Benefits 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink Reduced isolation effort due to extended creepage and clearance distances of package Reduced system complexity High power density Applications DIN rail power supplies General purpose motor drive - variating frequency and voltage Industrial motor drives and controls LED strips and signage Photovoltaic Designers who used this product also designed with ETD630N16P60 | Thyristor / Diode Modules 1ED3321MC12N | Gate driver ICs FF450R17ME7_B11 | IGBT modules IDK10G120C5 | CoolSiC™ Schottky Diodes FD300R17KE4 | IGBT modules 2EP130R | Transformer Driver ICs 1ED3320MC12N | Gate driver ICs TD320N16SOF | Thyristor / Diode Modules FF225R17ME7_B11 | IGBT modules ETD630N16P60 | Thyristor / Diode Modules 1ED3321MC12N | Gate driver ICs FF450R17ME7_B11 | IGBT modules IDK10G120C5 | CoolSiC™ Schottky Diodes FD300R17KE4 | IGBT modules 2EP130R | Transformer Driver ICs 1ED3320MC12N | Gate driver ICs TD320N16SOF | Thyristor / Diode Modules 1 2 3