IMLT65R040M2H is a 650 V Silicon Carbide MOSFET in a PG-HDSOP-16 package, designed for high-efficiency power conversion applications such as SMPS, solar inverters, EV charging, and motor drives. It has a typical drain-source on-resistance of 40 mΩ, a gate threshold voltage of 4.5 V, and a pulsed drain current rating of 143 A. The device features ultra-low switching losses, robust body diode operation, and compatibility with bipolar gate driving. Thermal resistance from junction to case is 0.56 °C/W, and it operates with a maximum junction temperature of 175 °C. The package supports top-side cooling, with pin assignments indicating distinct source and driver source terminals that must not be interchanged. The part is qualified per JEDEC standards for industrial applications.
CoolSiC™ MOSFET 650 V G2 in TOLT package
The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMLT65R040M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMLT65R040M2H |
| Polarity | N-Channel; N |
