Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R015M2H IMT40R015M2H

Description
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers. Summary of Features Better FOMs compared to 650 V SiC MOSFETs Fast commutation robust diode with low Qfr Low RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs High design robustness Reduced EMI filtering Use in hard-switching topologies Applications Audio amplifier solutions Battery management systems (BMS) Motor Control Renewables Server power supply units (PSU)
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R015M2H - IMT40R015M2H - Infineon Technologies AG
    Infineon Technologies AG
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Description
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers. Summary of Features Better FOMs compared to 650 V SiC MOSFETs Fast commutation robust diode with low Qfr Low RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs High design robustness Reduced EMI filtering Use in hard-switching topologies Applications Audio amplifier solutions Battery management systems (BMS) Motor Control Renewables Server power supply units (PSU)
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Datasheet
Datasheet Summary
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The IMT40R015M2H is a 400 V silicon carbide MOSFET in a PG-HSOF-8 package, designed for high-efficiency power conversion in applications such as SMPS, solar inverters, motor drives, and energy storage. It has a typical on-state resistance of 15.0 mΩ, a continuous drain current of 79 A at 100 °C case temperature, and a pulsed drain current of 333 A. The device is 100% avalanche tested, with a single-pulse avalanche energy rating of 162 mJ. The gate threshold voltage is 4.5 V, and it is recommended for gate driving between 0 V and 18 V. It features .XT interconnection technology for enhanced thermal performance and is fully qualified according to JEDEC for industrial applications. The operating junction temperature ranges from -55 °C to 175 °C.

Datasheet Summary
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The IMT40R015M2H is a 400 V silicon carbide MOSFET in a PG-HSOF-8 package, designed for high-efficiency power conversion in applications such as SMPS, solar inverters, motor drives, and energy storage. It has a typical on-state resistance of 15.0 mΩ, a continuous drain current of 79 A at 100 °C case temperature, and a pulsed drain current of 333 A. The device is 100% avalanche tested, with a single-pulse avalanche energy rating of 162 mJ. The gate threshold voltage is 4.5 V, and it is recommended for gate driving between 0 V and 18 V. It features .XT interconnection technology for enhanced thermal performance and is fully qualified according to JEDEC for industrial applications. The operating junction temperature ranges from -55 °C to 175 °C.

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Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R015M2H - IMT40R015M2H - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R015M2H
IMT40R015M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R015M2H IMT40R015M2H
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers. Summary of Features Better FOMs compared to 650 V SiC MOSFETs Fast commutation robust diode with low Qfr Low RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs High design robustness Reduced EMI filtering Use in hard-switching topologies Applications Audio amplifier solutions Battery management systems (BMS) Motor Control Renewables Server power supply units (PSU)

The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.

Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.

Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.


Summary of Features

  • Better FOMs compared to 650 V SiC MOSFETs
  • Fast commutation robust diode with low Qfr
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • High controllability of switching speed
  • Low overshoot during high dV/dt operation
  • .XT interconnection technology
  • Best-in-class thermal performance

Benefits

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies

Applications

  • Audio amplifier solutions
  • Battery management systems (BMS)
  • Motor Control
  • Renewables
  • Server power supply units (PSU)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMT40R015M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R015M2H
Polarity N-Channel; N
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