N-Channel 600V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
MOSFET, N-CH, 600V, 12.5A, 55.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:1.2V; Power RoHS Compliant: Yes
GANFET N-CH 600V 12.5A 8HSOF
MOSFET 600V CoolGaN Power Transistor
| DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IGT60R190D1SATMA1TR-ND | 84AC1772 | IGT60R190D1SATMA1 | IGT60R190D1SATMA1 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 12.5A, 55.5W; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | |||
| Transistor Technology / Material | Gallium Nitride | |||
| Package Type | 8-PowerSFN | TO-3 | 8-PowerSFN |
