Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R099C6 IPA60R099C6

Manufacturer: Infineon Technologies
Win Source Part Number: 068938-IPA60R099C6
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 37.9A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.21mA
Max Gate Charge: 119nC @ 10V
Max Input Capacitance: 2660pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 99 mOhm @ 18.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220FP Tube Product overview: IPA60R099C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 37.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 37.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R099C6 can be used for catalog matching and distributor lookup.