Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IAUS165N08S5N029ATMA1

Description
Win Source Part Number: 1354168-IAUS165N08S5 N029ATMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ Package: Tape & Reel Product Status: Active Package / Case: 8-PowerSMD, Gull Wing Supplier Device Package: PG-HSOG-8-1 Base Product Number: IAUS165 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Power Dissipation (Max): 167W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Description
Win Source Part Number: 1354168-IAUS165N08S5 N029ATMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ Package: Tape & Reel Product Status: Active Package / Case: 8-PowerSMD, Gull Wing Supplier Device Package: PG-HSOG-8-1 Base Product Number: IAUS165 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Power Dissipation (Max): 167W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1354168-IAUS165N08S5N029ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1354168-IAUS165N08S5N029ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1354168-IAUS165N08S5N029ATMA1
Win Source Part Number: 1354168-IAUS165N08S5 N029ATMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 57 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Series: Automotive, AEC-Q101, OptiMOS™ Package: Tape & Reel Product Status: Active Package / Case: 8-PowerSMD, Gull Wing Supplier Device Package: PG-HSOG-8-1 Base Product Number: IAUS165 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 3.8V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Power Dissipation (Max): 167W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1354168-IAUS165N08S5N029ATMA1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel
Product Status: Active
Package / Case: 8-PowerSMD, Gull Wing
Supplier Device Package: PG-HSOG-8-1
Base Product Number: IAUS165
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Power Dissipation (Max): 167W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

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Single FETs, MOSFETs - IAUS165N08S5N029ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IAUS165N08S5N029ATMA1TR-ND
Single FETs, MOSFETs IAUS165N08S5N029ATMA1TR-ND
N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOG-8-1

N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOG-8-1

Buy Now Datasheet
Single FETs, MOSFETs - IAUS165N08S5N029ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IAUS165N08S5N029ATMA1DKR-ND
Single FETs, MOSFETs IAUS165N08S5N029ATMA1DKR-ND
N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOG-8-1

N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOG-8-1

Buy Now Datasheet
Single FETs, MOSFETs - IAUS165N08S5N029ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IAUS165N08S5N029ATMA1CT-ND
Single FETs, MOSFETs IAUS165N08S5N029ATMA1CT-ND
N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOG-8-1

N-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOG-8-1

Buy Now Datasheet
Singapore, Singapore
80V 165A MOSFET Transistor
278-IAUS165N08S5N029ATMA1
80V 165A MOSFET Transistor 278-IAUS165N08S5N029ATMA1
MOSFET N-CH 80V 165A HSOG-8 Product overview: IAUS165N08S5N029ATMA 1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 165A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 165A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IAUS165N08S5N029 ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 80V 165A HSOG-8 Product overview: IAUS165N08S5N029ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 165A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 165A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IAUS165N08S5N029ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IAUS165N08S5N029ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IAUS165N08S5N029ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IAUS165N08S5N029ATMA1
MOSFET N-CH 80V 165A HSOG-8

MOSFET N-CH 80V 165A HSOG-8

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 80V, 165A, 167W Rohs Compliant Infineon - 42AH1789 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 80V, 165A, 167W Rohs Compliant Infineon
42AH1789
Mosfet, Aec-Q101, N-Ch, 80V, 165A, 167W Rohs Compliant Infineon 42AH1789
MOSFET, AEC-Q101, N-CH, 80V, 165A, 167W ROHS COMPLIANT: YES

MOSFET, AEC-Q101, N-CH, 80V, 165A, 167W ROHS COMPLIANT: YES

Supplier's Site Datasheet
MOSFET

MOSFET

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1354168-IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1TR-ND 278-IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 42AH1789 IAUS165N08S5N029ATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs 80V 165A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aec-Q101, N-Ch, 80V, 165A, 167W Rohs Compliant Infineon MOSFET
Polarity N-Channel N-Channel N-Channel
PD 167000 milliwatts 167 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 8-PowerSMD, Gull Wing Tape & Reel (TR) 8-PowerSMD, Gull Wing TO-3
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