The IMT65R033M2H is a 650 V Silicon Carbide MOSFET in the PG-HSOF-8 package, designed for high-efficiency power conversion applications such as solar inverters, EV charging, and motor drives. It features a typical on-resistance of 33 mΩ, a gate threshold voltage of 4.5 V, and a peak drain current of 176 A. The device supports a maximum junction temperature of 175 °C and is fully qualified to JEDEC standards for industrial applications. Its .XT interconnection technology enables superior thermal performance, and it is robust against parasitic turn-on with 0 V turn-off gate voltage.
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMT65R033M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R033M2H |
| Polarity | N-Channel; N |
