CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package
The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Summary of Features
Best in class switching and conduction losses
Benchmark high threshold voltage, Vth > 4 V
0 V turn-off gate voltage for easy and simple gate drive
Wide gate-source voltage range
Robust and low loss body diode rated for hard commutation
Temperature independent turn-off switching losses
.XT interconnection technology for best-in-class thermal performance
Benefits
Highest efficiency
Reduced cooling effort
Higher frequency operation
Increased power density
Reduced system complexity
Applications
Battery formation
EV charging
Motor Control
Photovoltaic
Uninterruptible power supplies (UPS)
CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package
The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Summary of Features
- Best in class switching and conduction losses
- Benchmark high threshold voltage, Vth > 4 V
- 0 V turn-off gate voltage for easy and simple gate drive
- Wide gate-source voltage range
- Robust and low loss body diode rated for hard commutation
- Temperature independent turn-off switching losses
- .XT interconnection technology for best-in-class thermal performance
Benefits
- Highest efficiency
- Reduced cooling effort
- Higher frequency operation
- Increased power density
- Reduced system complexity
Applications
- Battery formation
- EV charging
- Motor Control
- Photovoltaic
- Uninterruptible power supplies (UPS)
