IMW120R014M1H is a 1200 V silicon carbide trench MOSFET in a TO-247-3 package, designed for high-efficiency switching in applications such as EV charging, industrial UPS, and solar inverters. It has a maximum continuous drain current of 127 A at 25°C and a drain-source on-state resistance of 14 mΩ at 18 V gate voltage and 25°C. The device features a gate threshold voltage of 4.2 V, can withstand a short-circuit condition for 3 µs, and supports a peak drain current of 267.9 A. Thermal resistance from junction to case is 0.25 to 0.33 K/W, and junction-to-ambient thermal resistance is 62 K/W. The body diode is rated for hard commutation, and the gate can be driven with 0 V turn-off voltage. It is qualified for industrial applications per JEDEC JESD47/20/22 but not qualified for automotive use per AEC-Q100 or AEC-Q101.
CoolSiC™ 1200 V, 14 mΩ SiC Trench MOSFET in TO247-3 package
The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMW120R014M1H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW120R014M1H |
| Polarity | N-Channel; N |
