The IMDQ75R060M2H is a 750 V Silicon Carbide MOSFET in a PG-HDSOP-22 package, designed for high-efficiency switching applications such as EV charging, solar inverters, and server SMPS. It features a typical on-resistance of 60 mΩ, a gate charge of 20 nC, and a peak drain current of 94 A. The device is 100% avalanche tested, supports an extended junction temperature up to 200 °C for limited durations, and offers best-in-class thermal dissipation through a proprietary die attach and driver source pin. The thermal resistance junction-to-case is 0.84-1.17 °C/W. It is qualified according to JEDEC tests and supports a maximum drain-source voltage of 750 V over the full operating temperature range.
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMDQ75R060M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMDQ75R060M2H |
| Polarity | N-Channel; N |
