Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMDQ75R060M2H IMDQ75R060M2H

The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. Summary of Features 100% avalanche tested Best‑in‑class RDS(on) x Qfr Excellent RDS(on) x Qoss & RDS(on) x QG Unique low Crss/Ciss & high VGS(th) Improved package interconnect with .XT Driver source pin available Benefits Enhanced robustness and reliability Superior efficiency in hard switching Higher switching frequency Robustness against parasitic turn on Best‑in‑class thermal dissipation Reduced switching losses Potential Applications Solid State Relays and Isolators Solid-State Circuit Breaker EV Charging Photovoltaic Uninterruptible power supplies (UPS) Energy Storage Systems Battery formation AC-DC power conversion for telecom infrastructure Server power supply units (PSU)