Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG120R040M2H IMBG120R040M2H

The CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features RDS(on) = 39.6 mΩ at VGS = 18 V, Tvj = 25°C Very low switching losses Overload operation up to Tvj = 200°C Short circuit withstand time 2 µs Benchmark gate threshold voltage, VGS(th) = 4.2 V Robust against parasitic turn on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Benefits Better energy efficiency Cooling optimization Higher power density New robustness features Highly reliable Applications EV charging Industrial motor drives and controls Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IDK20G120C5 | CoolSiC™ Schottky Diodes IDM02G120C5 | CoolSiC™ Schottky Diodes IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF17MR12W1M1H_B11 | Silicon Carbide CoolSiC™ MOSFET Modules 1ED3124MC12H | Gate driver ICs IDK20G120C5 | CoolSiC™ Schottky Diodes IDM02G120C5 | CoolSiC™ Schottky Diodes IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET FF17MR12W1M1H_B11 | Silicon Carbide CoolSiC™ MOSFET Modules 1ED3124MC12H | Gate driver ICs IDK20G120C5 | CoolSiC™ Schottky Diodes IDM02G120C5 | CoolSiC™ Schottky Diodes IPB60R180C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2