The IMT40R036M2H is a 400 V silicon carbide MOSFET designed for high-efficiency power conversion in applications such as SMPS, solar inverters, motor drives, and energy storage. It is packaged in a PG-HSOF-8 case with dimensions of 10.28 mm to 10.58 mm in length, 9.70 mm to 10.10 mm in width, and 11.48 mm to 11.88 mm in height. The device features a typical on-state resistance of 36.4 mΩ at 25 °C, a continuous drain current of 36 A at 100 °C case temperature, and a gate threshold voltage of 4.5 V. It supports 0 V to 18 V gate drive, is 100% avalanche tested with single-pulse avalanche energy of 66 mJ, and employs .XT interconnection technology for enhanced thermal performance. The part is fully qualified according to JEDEC for industrial applications.
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.
Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.
Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMT40R036M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R036M2H |
| Polarity | N-Channel; N |
