The IMT65R072M1H is a 650 V silicon carbide MOSFET in a PG-HSOF-8 package, designed for high-efficiency power conversion applications such as SMPS, UPS, solar inverters, and EV charging. It features a typical on-resistance of 72 mΩ, a maximum drain current of 69 A, and a gate charge of 22 nC. The device includes a Kelvin source connection to reduce switching losses and is rated for a maximum junction temperature of 175°C. Fully qualified according to JEDEC for industrial applications, it supports standard gate drivers and offers enhanced avalanche capability and commutation robustness.
Small footprint, low inductance and reduced thermal impedance for high density designs
CoolSIC™ MOSFET 650 V, 72 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 72 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, makes the 72 mΩ product suitable for high to mid power systems. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages. It is also successfully used in interleaved topologies to address high efficiency targets in high power systems.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMT65R072M1H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R072M1H |
| Polarity | N-Channel; N |
