N-Channel 80V 89A (Tc) 42W (Tc) Through Hole PG-TO220-FP
Win Source Part Number: 1033558-IPA028N08N3G
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Power Dissipation (Max): 42W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): FDP86363_F085; IPA032N06N3GXKSA1; IPP100N10S305AKSA1; IPP90N06S404AKSA1; BUK754R3-75C,127; STP150N10F7IPA028N08
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPA028N08N3GXK
Base Product Number: IPA028
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 80V 89A TO220-FP
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPA028N08N3GXKSA1-ND | 1033558-IPA028N08N3GXKSA1 | IPA028N08N3GXKSA1 | IPA028N08N3GXKSA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |