Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R033M2H IMTA65R033M2H

Description
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. Summary of Features Excellent figures of merit (FOMs) Best in class RDS(on) High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGS(off)=0) Pin to pin compatible with all 8x8 FETs Improved package interconnect with .XT 4x improvement in TCoB Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability and longer lifetime Enables top efficiency and power density Small footprint to more power density Most compact daughter card design Applications Complete system solutions for smart TVs Heating ventilation and air conditioning (HVAC) Home appliances Microinverter solutions Power conversion
Request a Quote Datasheet
Description
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. Summary of Features Excellent figures of merit (FOMs) Best in class RDS(on) High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGS(off)=0) Pin to pin compatible with all 8x8 FETs Improved package interconnect with .XT 4x improvement in TCoB Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability and longer lifetime Enables top efficiency and power density Small footprint to more power density Most compact daughter card design Applications Complete system solutions for smart TVs Heating ventilation and air conditioning (HVAC) Home appliances Microinverter solutions Power conversion
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R033M2H - IMTA65R033M2H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R033M2H
IMTA65R033M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R033M2H IMTA65R033M2H
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. Summary of Features Excellent figures of merit (FOMs) Best in class RDS(on) High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGS(off)=0) Pin to pin compatible with all 8x8 FETs Improved package interconnect with .XT 4x improvement in TCoB Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability and longer lifetime Enables top efficiency and power density Small footprint to more power density Most compact daughter card design Applications Complete system solutions for smart TVs Heating ventilation and air conditioning (HVAC) Home appliances Microinverter solutions Power conversion

The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.


Summary of Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS(off)=0)
  • Pin to pin compatible with all 8x8 FETs
  • Improved package interconnect with .XT
  • 4x improvement in TCoB

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design

Applications

  • Complete system solutions for smart TVs
  • Heating ventilation and air conditioning (HVAC)
  • Home appliances
  • Microinverter solutions
  • Power conversion
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMTA65R033M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R033M2H
Polarity N-Channel; N
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