The IMTA65R033M2H is a 650 V silicon carbide (SiC) MOSFET designed for high-efficiency power conversion applications such as SMPS, solar inverters, and EV charging. It is packaged in a PG-LHSOF-4 (ThinTOLL) case measuring 8.20 mm x 7.80 mm with a 2.00 mm lead pitch. The device features a typical on-resistance of 33 mΩ at 25°C, a pulse drain current rating of 175 A, and a gate threshold voltage of 4.5 V. The thermal resistance from junction to case is 0.48 °C/W. It is fully qualified for industrial applications per JEDEC and supports bipolar or unipolar gate driving with 0 V turn-off voltage. The package uses .XT interconnection technology for enhanced thermal performance.
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMTA65R033M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R033M2H |
| Polarity | N-Channel; N |
