Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R050M2H IMT65R050M2H

Description
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. Summary of Features Excellent figures-of-merit (FOMs) Best in class RDS(on) Outstanding robustness Flexible driving voltage range Pin-to-pin compatible with all 8x8 FETs Improved package interconnect with .XT Tj,max=175°C 12k-cycle in TCoB Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability and longer lifetime Enables top efficiency and power density Small footprint to more power density Most compact daughter card design Fully leverages SiC in a small footprint Applications Complete system solutions for smart TVs Energy Storage Systems Heating ventilation and air conditioning (HVAC) Microinverter solutions Power conversion
Request a Quote Datasheet
Description
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. Summary of Features Excellent figures-of-merit (FOMs) Best in class RDS(on) Outstanding robustness Flexible driving voltage range Pin-to-pin compatible with all 8x8 FETs Improved package interconnect with .XT Tj,max=175°C 12k-cycle in TCoB Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability and longer lifetime Enables top efficiency and power density Small footprint to more power density Most compact daughter card design Fully leverages SiC in a small footprint Applications Complete system solutions for smart TVs Energy Storage Systems Heating ventilation and air conditioning (HVAC) Microinverter solutions Power conversion
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R050M2H - IMT65R050M2H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R050M2H
IMT65R050M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R050M2H IMT65R050M2H
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density. Summary of Features Excellent figures-of-merit (FOMs) Best in class RDS(on) Outstanding robustness Flexible driving voltage range Pin-to-pin compatible with all 8x8 FETs Improved package interconnect with .XT Tj,max=175°C 12k-cycle in TCoB Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability and longer lifetime Enables top efficiency and power density Small footprint to more power density Most compact daughter card design Fully leverages SiC in a small footprint Applications Complete system solutions for smart TVs Energy Storage Systems Heating ventilation and air conditioning (HVAC) Microinverter solutions Power conversion

The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.


Summary of Features

  • Excellent figures-of-merit (FOMs)
  • Best in class RDS(on)
  • Outstanding robustness
  • Flexible driving voltage range
  • Pin-to-pin compatible with all 8x8 FETs
  • Improved package interconnect with .XT
  • Tj,max=175°C
  • 12k-cycle in TCoB

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability and longer lifetime
  • Enables top efficiency and power density
  • Small footprint to more power density
  • Most compact daughter card design
  • Fully leverages SiC in a small footprint

Applications

  • Complete system solutions for smart TVs
  • Energy Storage Systems
  • Heating ventilation and air conditioning (HVAC)
  • Microinverter solutions
  • Power conversion
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMT65R050M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R050M2H
Polarity N-Channel; N
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