Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA075N15N3G IPA075N15N3G

Manufacturer: Infineon Technologies
Win Source Part Number: 068931-IPA075N15N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 43A (Tc)
Gate-Source Threshold Voltage: 4V @ 270μA
Max Gate Charge: 93nC @ 10V
Max Input Capacitance: 7280pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 43A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

MOSFET N-CH 150V 43A TO220-3 Product overview: IPA075N15N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 43A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 43A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA075N15N3G can be used for catalog matching and distributor lookup.