Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R048M1H IMT65R048M1H

Description
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 48 mΩ product suitable for high power designs and mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems. Summary of Features Small form factor Low parasitic inductance and Kelvin source connection Reduced thermal impedance .XT interconnect Thermal improvement over D²PAK and similar to TO-220 Suitable for wave or reflow soldering Industry standard package - JEDEC industrial applications qualified (J-STD20 and JESD22) Benefits Enable high system power density and high switching operations Enable cheaper and faster SMD assembly Ease of use and compatibility with existing vendors Reduced switching losses Lower case temperature and higher reliability Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™ Potential Applications Datacenter Power Telecom power Solar Inverters Energy storage systems Battery formation Industrial SMPS Motor drives Online UPS Designers who used this product also designed with 1EDN7550B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-05W | Schottky Diodes 1EDN7550B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-05W | Schottky Diodes 1 2
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R048M1H - IMT65R048M1H - Infineon Technologies AG
    Infineon Technologies AG
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Description
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 48 mΩ product suitable for high power designs and mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems. Summary of Features Small form factor Low parasitic inductance and Kelvin source connection Reduced thermal impedance .XT interconnect Thermal improvement over D²PAK and similar to TO-220 Suitable for wave or reflow soldering Industry standard package - JEDEC industrial applications qualified (J-STD20 and JESD22) Benefits Enable high system power density and high switching operations Enable cheaper and faster SMD assembly Ease of use and compatibility with existing vendors Reduced switching losses Lower case temperature and higher reliability Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™ Potential Applications Datacenter Power Telecom power Solar Inverters Energy storage systems Battery formation Industrial SMPS Motor drives Online UPS Designers who used this product also designed with 1EDN7550B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-05W | Schottky Diodes 1EDN7550B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-05W | Schottky Diodes 1 2
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Datasheet
Datasheet Summary
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The IMT65R048M1H is a 650 V silicon carbide MOSFET designed for high-efficiency power conversion in applications such as SMPS, UPS, solar inverters, and EV charging infrastructure. It is packaged in a PG-HSOF-8 case measuring 10.58 mm x 10.10 mm with a maximum height of 11.88 mm. The device features a typical on-state resistance of 48 mΩ at 25 °C, a maximum continuous drain current of 35 A at 100 °C, and a peak drain current of 99 A. It supports a maximum junction temperature of 175 °C and includes a Kelvin source connection to reduce switching losses. The MOSFET is fully qualified for industrial applications per JEDEC standards and complies with RoHS requirements. Thermal resistance from junction to case is 0.66 °C/W. It is compatible with standard gate drivers and exhibits high avalanche energy capability at 171 mJ for single pulses.

Datasheet Summary
Powered by GS/AI

The IMT65R048M1H is a 650 V silicon carbide MOSFET designed for high-efficiency power conversion in applications such as SMPS, UPS, solar inverters, and EV charging infrastructure. It is packaged in a PG-HSOF-8 case measuring 10.58 mm x 10.10 mm with a maximum height of 11.88 mm. The device features a typical on-state resistance of 48 mΩ at 25 °C, a maximum continuous drain current of 35 A at 100 °C, and a peak drain current of 99 A. It supports a maximum junction temperature of 175 °C and includes a Kelvin source connection to reduce switching losses. The MOSFET is fully qualified for industrial applications per JEDEC standards and complies with RoHS requirements. Thermal resistance from junction to case is 0.66 °C/W. It is compatible with standard gate drivers and exhibits high avalanche energy capability at 171 mJ for single pulses.

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Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R048M1H - IMT65R048M1H - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R048M1H
IMT65R048M1H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R048M1H IMT65R048M1H
Small footprint, low inductance and reduced thermal impedance for high density designs CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 48 mΩ product suitable for high power designs and mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems. Summary of Features Small form factor Low parasitic inductance and Kelvin source connection Reduced thermal impedance .XT interconnect Thermal improvement over D²PAK and similar to TO-220 Suitable for wave or reflow soldering Industry standard package - JEDEC industrial applications qualified (J-STD20 and JESD22) Benefits Enable high system power density and high switching operations Enable cheaper and faster SMD assembly Ease of use and compatibility with existing vendors Reduced switching losses Lower case temperature and higher reliability Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™ Potential Applications Datacenter Power Telecom power Solar Inverters Energy storage systems Battery formation Industrial SMPS Motor drives Online UPS Designers who used this product also designed with 1EDN7550B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-05W | Schottky Diodes 1EDN7550B | Gate driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IQDH45N04LM6CG | N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPN80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BAS70-05W | Schottky Diodes 1 2

Small footprint, low inductance and reduced thermal impedance for high density designs

CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 48 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, make the 48 mΩ product suitable for high power designs and mid power systems, with high efficiency targets. It ideally fits the emerging Totem Pole PFC topology in high to mid power systems. It also enables high efficiency and density in DC-DC and AC-DC stages of high to mid power systems.


Summary of Features

  • Small form factor
  • Low parasitic inductance and Kelvin source connection
  • Reduced thermal impedance
  • .XT interconnect
  • Thermal improvement over D²PAK and similar to TO-220
  • Suitable for wave or reflow soldering
  • Industry standard package - JEDEC industrial applications qualified (J-STD20 and JESD22)

Benefits

  • Enable high system power density and high switching operations
  • Enable cheaper and faster SMD assembly
  • Ease of use and compatibility with existing vendors
  • Reduced switching losses
  • Lower case temperature and higher reliability
  • Enables easy design-in with complementing Infineon products like CoolMOS™ and CoolGaN™

Potential Applications

  • Datacenter Power
  • Telecom power
  • Solar Inverters
  • Energy storage systems
  • Battery formation
  • Industrial SMPS
  • Motor drives
  • Online UPS

Designers who used this product also designed with


  • 1EDN7550B |
    Gate driver ICs
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQDH45N04LM6CG |
    N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPN80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BAS70-05W |
    Schottky Diodes
  • 1EDN7550B |
    Gate driver ICs
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IQDH45N04LM6CG |
    N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPN80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BAS70-05W |
    Schottky Diodes

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMT65R048M1H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT65R048M1H
Polarity N-Channel; N
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