MOSFET N-CH 60V 84A TO220-FP Product overview: IPA029N06NXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 84A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 84A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA029N06NXKSA1 can be used for catalog matching and distributor lookup.
N-Channel 60V 84A (Tc) 38W (Tc) Through Hole PG-TO220-FP
Manufacturer: Infineon Technologies
Win Source Part Number: 776828-IPA029N06NXKS
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Family Name: IPA029N06N
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO220-FP
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3.3V @ 75μA
Gate Charge (Qg) (Maximum) @ Vgs: 66nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5125pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 38W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.9 mOhm @ 84A, 10V
Alternative Parts (Cross-Reference): STF140N6F7; STF100N6F7;
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 60V, 175DEG C, 38W ROHS COMPLIANT: YES
MOSFET N-CH 60V 84A TO220-FP
MOSFET N-CH 60V 84A TO220-FP
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPA029N06NXKSA1 | 448-IPA029N06NXKSA1-ND | 2420981 | 776828-IPA029N06NXKSA1 | IPA029N06NXKSA1 | 39AH8892 | IPA029N06NXKSA1 | IPA029N06NXKSA1 |
| Product Name | 60V 84A TO220 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA029N06NXKSA1 | MOSFET | Mosfet, N-Ch, 60V, 175Deg C, 38W Rohs Compliant Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 38 milliwatts | 38000 milliwatts | 38000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
