MOSFET 650V NCH SIC TRENCH Product overview: IMW65R072M1HXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IMW65R072M1HXKSA
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series: CoolSIC™ M1
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
MOSFET 650V NCH SIC TRENCH
MOSFET, N-CH, 650V, 26A, TO-247 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IMW65R072M1HXKSA1 | 2320394 | 448-IMW65R072M1HXKSA1-ND | IMW65R072M1HXKSA1 | 78AH7250 | |
| Product Name | 650V MOSFET Transistor | MOSFETs | Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 26A, To-247 Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 650 volts | |||||
| PD | 96 milliwatts |
