The IMW65R050M2H is a 650 V Silicon Carbide MOSFET in a PG-TO247-3 package, designed for high-efficiency power conversion in applications such as SMPS, EV charging, and solar inverters. It has a typical drain-source on-state resistance of 50 mΩ and a pulsed drain current of 113 A. The device features a gate threshold voltage of 4.5 V, supports bipolar driving with 0 V turn-off, and has a thermal resistance from junction to case of 0.98 °C/W. It is qualified according to JEDEC tests and operates with a maximum junction temperature of 175 °C.
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package
The CoolSiC™ MOSFET 650 V, 50 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMW65R050M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R050M2H |
| Polarity | N-Channel; N |
