The IMT40R025M2H is a 400 V silicon carbide MOSFET in a PG-HSOF-8 package, designed for high-efficiency power conversion in applications such as SMPS, solar inverters, motor drives, and energy storage. It has a typical drain-source on-state resistance of 25.4 mΩ at 25 °C and a continuous drain current rating of 48 A at a case temperature of 100 °C. The device features a benchmark gate threshold voltage of 4.5 V, operates with a recommended gate voltage range of 0 V to 18 V, and is 100% avalanche tested with a single-pulse avalanche energy rating of 93 mJ. Its thermal resistance from junction to case is 0.7 °C/W. The part uses .XT interconnection technology for enhanced thermal performance and is fully qualified according to JEDEC for industrial applications.
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.
Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.
Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMT40R025M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R025M2H |
| Polarity | N-Channel; N |
