The IMBG65R033M2H is a 650 V silicon carbide MOSFET in a PG-TO263-7 package, designed for high-efficiency power conversion in applications such as SMPS, EV charging, and solar inverters. It has a typical on-resistance of 33 mΩ and a maximum pulsed drain current of 175 A. The gate threshold voltage is 4.5 V, and it supports bipolar driving with robust operation under hard commutation. Thermal performance is enhanced by .XT interconnection technology. The device is fully qualified according to JEDEC for industrial applications and operates with a maximum junction temperature of 175 °C.
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | RS Components, Ltd. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMBG65R033M2H | 351961 |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R033M2H | MOSFETs |
| Polarity | N-Channel; N |
