Infineon Technologies AG 1700V 5.2A MOSFET Transistor IMBF170R1K0M1XTMA1

Description
SICFET N-CH 1700V 5.2A TO263-7 Product overview: IMBF170R1K0M1XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IMBF170R1K0M1XTM A1 can be used for catalog matching and distributor lookup.
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Description
SICFET N-CH 1700V 5.2A TO263-7 Product overview: IMBF170R1K0M1XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IMBF170R1K0M1XTM A1 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
1700V 5.2A MOSFET Transistor
278-IMBF170R1K0M1XTMA1
1700V 5.2A MOSFET Transistor 278-IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7 Product overview: IMBF170R1K0M1XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IMBF170R1K0M1XTM A1 can be used for catalog matching and distributor lookup.

SICFET N-CH 1700V 5.2A TO263-7 Product overview: IMBF170R1K0M1XTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1700V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1700V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IMBF170R1K0M1XTMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IMBF170R1K0M1XTMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IMBF170R1K0M1XTMA1DKR-ND
Single FETs, MOSFETs 448-IMBF170R1K0M1XTMA1DKR-ND
N-Channel 1700V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13

N-Channel 1700V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13

Buy Now Datasheet
Single FETs, MOSFETs - 448-IMBF170R1K0M1XTMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IMBF170R1K0M1XTMA1CT-ND
Single FETs, MOSFETs 448-IMBF170R1K0M1XTMA1CT-ND
N-Channel 1700V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13

N-Channel 1700V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13

Buy Now Datasheet
Single FETs, MOSFETs - 448-IMBF170R1K0M1XTMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IMBF170R1K0M1XTMA1TR-ND
Single FETs, MOSFETs 448-IMBF170R1K0M1XTMA1TR-ND
N-Channel 1700V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13

N-Channel 1700V 5.2A (Tc) 68W (Tc) Surface Mount PG-TO263-7-13

Buy Now Datasheet
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs -  - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Alternative Parts (Cross-Reference): Cross Manufacturer: Infineon Technologies Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs Series: CoolSiC™ Package: Tape & Reel (TR) Vgs (Max): +20V, -10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-13 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Alternative Parts (Cross-Reference): Cross
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: CoolSiC™
Package: Tape & Reel (TR)
Vgs (Max): +20V, -10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-13
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Buy Now Datasheet
MOSFETs - 2224849 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2224849
MOSFETs 2224849
Infineon IMBF170R1K0M1XTMA1

Infineon IMBF170R1K0M1XTMA1

Supplier's Site
MOSFETs - 2224847 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2224847
MOSFETs 2224847
Infineon IMBF170R1K0M1XTMA1

Infineon IMBF170R1K0M1XTMA1

Supplier's Site
MOSFETs - 2224849P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2224849P
MOSFETs 2224849P
Infineon IMBF170R1K0M1XTMA1

Infineon IMBF170R1K0M1XTMA1

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IMBF170R1K0M1XTMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IMBF170R1K0M1XTMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7

SICFET N-CH 1700V 5.2A TO263-7

Supplier's Site
Mosfet, N-Ch, 1.7Kv, 5.2A, To-263 Rohs Compliant Infineon - 78AH7247 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 1.7Kv, 5.2A, To-263 Rohs Compliant Infineon
78AH7247
Mosfet, N-Ch, 1.7Kv, 5.2A, To-263 Rohs Compliant Infineon 78AH7247
MOSFET, N-CH, 1.7KV, 5.2A, TO-263 ROHS COMPLIANT: YES

MOSFET, N-CH, 1.7KV, 5.2A, TO-263 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - IMBF170R1K0M1XTMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IMBF170R1K0M1XTMA1
Single FETs, MOSFETs IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7

SICFET N-CH 1700V 5.2A TO263-7

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-IMBF170R1K0M1XTMA1 448-IMBF170R1K0M1XTMA1DKR-ND 2224849 IMBF170R1K0M1XTMA1 78AH7247 IMBF170R1K0M1XTMA1
Product Name 1700V 5.2A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 1.7Kv, 5.2A, To-263 Rohs Compliant Infineon Single FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 1700 volts 1700 volts
Transconductance 4.20E-4 kS
PD 68 milliwatts 68000 milliwatts
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