The IMDQ75R025M2H is a 750 V Silicon Carbide MOSFET in a PG-HDSOP-22 package, designed for high-efficiency switching applications such as EV charging, solar inverters, and server SMPS. It has a typical on-resistance of 25 mΩ at 25°C and a maximum on-resistance of 31 mΩ, with a gate charge of 49 nC. The device is rated for a pulsed drain current of 242 A and features 100% avalanche testing up to 230 mJ. It includes a driver source pin for improved gate control and supports operation up to an extended junction temperature of 200°C for up to 100 hours. The package utilizes Infineon's proprietary die attach technology and is qualified according to JEDEC standards.
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMDQ75R025M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMDQ75R025M2H |
| Polarity | N-Channel; N |
