The IMTA65R040M2H is a 650 V Silicon Carbide MOSFET in the PG-LHSOF-4 package, designed for high-efficiency power applications such as SMPS, solar inverters, and EV charging. It features a typical on-resistance of 40 mΩ and a maximum continuous drain current of 38 A at 100 °C. The device supports a gate-source voltage range of -7 V to 23 V, with transient tolerance up to ±25 V. It is fully qualified according to JEDEC for industrial applications and incorporates .XT interconnection technology for enhanced thermal performance. Peak drain current is rated at 142 A under pulsed conditions, and it exhibits ultra-low switching losses with a gate charge of 28 nC.
CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMTA65R040M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMTA65R040M2H |
| Polarity | N-Channel; N |
