Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA057N08N3G IPA057N08N3G

Manufacturer: Infineon Technologies
Win Source Part Number: 068930-IPA057N08N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 39W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 4750pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

MOSFET N-CH 80V 60A TO220-3 Product overview: IPA057N08N3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 60A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 60A, TO220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPA057N08N3G can be used for catalog matching and distributor lookup.