Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA057N08N3G IPA057N08N3G

Manufacturer: Infineon Technologies Win Source Part Number: 068930-IPA057N08N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 39W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-FP Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 3.5V @ 90μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 4750pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited