Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG120R026M2H IMBG120R026M2H

Description
The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C Very low switching losses Overload operation up to Tvj = 200°C Short circuit withstand time 2 µs Benchmark gate threshold voltage, VGS(th) = 4.2 V Robust against parasitic turn on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Benefits Better energy efficiency Cooling optimization Higher power density New robustness features Highly reliable Applications EV charging Industrial motor drives and controls Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote Datasheet
Description
The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C Very low switching losses Overload operation up to Tvj = 200°C Short circuit withstand time 2 µs Benchmark gate threshold voltage, VGS(th) = 4.2 V Robust against parasitic turn on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Benefits Better energy efficiency Cooling optimization Higher power density New robustness features Highly reliable Applications EV charging Industrial motor drives and controls Photovoltaic Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG120R026M2H - IMBG120R026M2H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG120R026M2H
IMBG120R026M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG120R026M2H IMBG120R026M2H
The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C Very low switching losses Overload operation up to Tvj = 200°C Short circuit withstand time 2 µs Benchmark gate threshold voltage, VGS(th) = 4.2 V Robust against parasitic turn on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Benefits Better energy efficiency Cooling optimization Higher power density New robustness features Highly reliable Applications EV charging Industrial motor drives and controls Photovoltaic Uninterruptible power supplies (UPS)

The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a D2PAK-7L (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.


Summary of Features

  • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance

Benefits

  • Better energy efficiency
  • Cooling optimization
  • Higher power density
  • New robustness features
  • Highly reliable

Applications

  • EV charging
  • Industrial motor drives and controls
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMBG120R026M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG120R026M2H
Polarity N-Channel; N
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