Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA028N08N3 G IPA028N08N3 G

Manufacturer: Infineon Technologies
Win Source Part Number: 129927-IPA028N08N3 G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-FP
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 89A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 270μA
Max Gate Charge: 206nC @ 10V
Max Input Capacitance: 14200pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 89A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited

MOSFETs N-Ch 80V 89A TO220FP-3 Product overview: IPA028N08N3 G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 89A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 89A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA028N08N3 G can be used for catalog matching and distributor lookup.