The IMBG65R007M2H is a 650 V Silicon Carbide MOSFET in a PG-TO263-7 package, designed for high-efficiency power conversion in applications such as SMPS, EV charging, and solar inverters. It features a typical drain-source on-state resistance of 6.7 mΩ and a gate threshold voltage of 4.5 V. The device supports flexible gate driving, including unipolar operation with 0 V turn-off voltage, and has a peak drain current rating of 897 A. It is fully qualified for industrial applications per JEDEC standards and includes .XT interconnection technology for enhanced thermal performance. The package dimensions are specified with a body length of 15.00 mm, width of 9.80 to 10.20 mm, and height of 4.30 to 4.50 mm.
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package
The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMBG65R007M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R007M2H |
| Polarity | N-Channel; N |
