Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R007M2H IMBG65R007M2H

Description
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features Excellent figures of merit (FOMs) Single digit RDS(on) in a D2PAK-7 SMD High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGSoff=0) Best immunity against turn-on effects Improved package interconnect with .XT Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability Enables top efficiency and power density Ease-of-use Full compatibility with existing vendors Allows designs without fan or heatsink Potential Applications Switched mode power supplies (SMPS) Solid State Circuit Breaker (SSCB) EV charging PV inverters Energy storage systems Applications 1-phase string inverter solutions Energy Storage Systems EV charging Power conversion Solid-State Circuit Breaker
Request a Quote Datasheet
Description
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features Excellent figures of merit (FOMs) Single digit RDS(on) in a D2PAK-7 SMD High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGSoff=0) Best immunity against turn-on effects Improved package interconnect with .XT Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability Enables top efficiency and power density Ease-of-use Full compatibility with existing vendors Allows designs without fan or heatsink Potential Applications Switched mode power supplies (SMPS) Solid State Circuit Breaker (SSCB) EV charging PV inverters Energy storage systems Applications 1-phase string inverter solutions Energy Storage Systems EV charging Power conversion Solid-State Circuit Breaker
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R007M2H - IMBG65R007M2H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R007M2H
IMBG65R007M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R007M2H IMBG65R007M2H
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features Excellent figures of merit (FOMs) Single digit RDS(on) in a D2PAK-7 SMD High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGSoff=0) Best immunity against turn-on effects Improved package interconnect with .XT Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability Enables top efficiency and power density Ease-of-use Full compatibility with existing vendors Allows designs without fan or heatsink Potential Applications Switched mode power supplies (SMPS) Solid State Circuit Breaker (SSCB) EV charging PV inverters Energy storage systems Applications 1-phase string inverter solutions Energy Storage Systems EV charging Power conversion Solid-State Circuit Breaker

CoolSiC™ MOSFET 650 V G2 in TO-263-7 package

The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.


Summary of Features

  • Excellent figures of merit (FOMs)
  • Single digit RDS(on) in a D2PAK-7 SMD
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGSoff=0)
  • Best immunity against turn-on effects
  • Improved package interconnect with .XT

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Ease-of-use
  • Full compatibility with existing vendors
  • Allows designs without fan or heatsink

Potential Applications

  • Switched mode power supplies (SMPS)
  • Solid State Circuit Breaker (SSCB)
  • EV charging
  • PV inverters
  • Energy storage systems

Applications

  • 1-phase string inverter solutions
  • Energy Storage Systems
  • EV charging
  • Power conversion
  • Solid-State Circuit Breaker
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMBG65R007M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R007M2H
Polarity N-Channel; N
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 94-2304-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-220; TO-220-3
View Details
2 suppliers
Single FETs, MOSFETs - AUIRF3710Z-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-220; TO-220-3
Transistor Grade / Operating Range Automotive
View Details
4 suppliers
MOSFETs - 348940 - RS Components, Ltd.
Infineon Technologies AG
Specs
Package Type PG-TO247-4
View Details
2 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRF7309QTR - 1020724-AUIRF7309QTR - Win Source Electronics
Specs
Polarity P-Channel
V(BR)DSS 30 volts
PD 1400 milliwatts
View Details
6 suppliers