The IMZA65R033M2H is a 650 V silicon carbide MOSFET in a PG-TO247-4 package, designed for high-efficiency power conversion applications such as PV inverters, EV charging, and motor drives. It features a typical on-resistance of 33 mΩ, a gate threshold voltage of 4.5 V, and a maximum pulsed drain current of 175 A. The device includes a Kelvin source connection and uses .XT interconnection technology for improved thermal performance. It is fully qualified according to JEDEC for industrial applications and operates with a junction temperature range of -55°C to 175°C.
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMZA65R033M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA65R033M2H |
| Polarity | N-Channel; N |
