The IMBG65R015M2H is a 650 V Silicon Carbide MOSFET in a PG-TO263-7 package, designed for high-efficiency power conversion applications such as SMPS, solar PV inverters, EV charging, and motor drives. It has a typ. drain-source on-state resistance of 14.5 mΩ at 25°C and a maximum pulsed drain current of 398 A. The gate threshold voltage is 4.5 V typ., and it supports unipolar driving with 0 V turn-off gate voltage. The device features .XT interconnection technology for enhanced thermal performance, with a junction-to-case thermal resistance of 0.36 °C/W. It is fully qualified per JEDEC for industrial applications and operates with a maximum junction temperature of 175 °C. The package dimensions are 9.05 to 9.45 mm in length, 9.80 to 10.20 mm in width, and 15.00 mm in height.
CoolSiC™ MOSFET 650 V G2 in TO-263-7 package
The CoolSiC™ MOSFET 650 V, 15 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMBG65R015M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG65R015M2H |
| Polarity | N-Channel; N |
