Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H IMYH200R075M1H

The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems. Summary of Features VDSS = 2000 V for high DC-link systems up to 1500 VDC Very low switching losses Innovative HCC package 14 mm pin to pin creepage 5.4 mm clearance distances Benchmark gate threshold voltage, VGS(th) = 4.5 V Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Improved humidity robustness Benefits High power density Excellent reliability Highest efficiency Ease of design Applications Energy Storage Systems EV charging Photovoltaic