Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H IMYH200R075M1H

Description
The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems. Summary of Features VDSS = 2000 V for high DC-link systems up to 1500 VDC Very low switching losses Innovative HCC package 14 mm pin to pin creepage 5.4 mm clearance distances Benchmark gate threshold voltage, VGS(th) = 4.5 V Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Improved humidity robustness Benefits High power density Excellent reliability Highest efficiency Ease of design Applications Energy Storage Systems EV charging Photovoltaic
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H - IMYH200R075M1H - Infineon Technologies AG
    Infineon Technologies AG
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Description
The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems. Summary of Features VDSS = 2000 V for high DC-link systems up to 1500 VDC Very low switching losses Innovative HCC package 14 mm pin to pin creepage 5.4 mm clearance distances Benchmark gate threshold voltage, VGS(th) = 4.5 V Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Improved humidity robustness Benefits High power density Excellent reliability Highest efficiency Ease of design Applications Energy Storage Systems EV charging Photovoltaic
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Datasheet
Datasheet Summary
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The IMYH200R075M1H is a 2000 V silicon carbide trench MOSFET designed for high-efficiency power conversion in applications such as string inverters, solar power optimizers, and EV charging. It is packaged in a PG-TO247-4-PLUS-NT14 case with dimensions of 26.00-26.70 mm in length, 15.60-16.00 mm in width, and a pin pitch of 7.62 mm. The device has a drain-source on-state resistance of 75 mΩ at 25°C and 18 V gate voltage, and a continuous drain current of 34 A at 25°C. It features a gate threshold voltage of 4.5 V, a maximum junction temperature of 175°C, and thermal resistance from junction to case of 0.43-0.56 K/W. The device includes a Kelvin source connection and is qualified for industrial applications according to JEDEC JESD47/20/22.

Datasheet Summary
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The IMYH200R075M1H is a 2000 V silicon carbide trench MOSFET designed for high-efficiency power conversion in applications such as string inverters, solar power optimizers, and EV charging. It is packaged in a PG-TO247-4-PLUS-NT14 case with dimensions of 26.00-26.70 mm in length, 15.60-16.00 mm in width, and a pin pitch of 7.62 mm. The device has a drain-source on-state resistance of 75 mΩ at 25°C and 18 V gate voltage, and a continuous drain current of 34 A at 25°C. It features a gate threshold voltage of 4.5 V, a maximum junction temperature of 175°C, and thermal resistance from junction to case of 0.43-0.56 K/W. The device includes a Kelvin source connection and is qualified for industrial applications according to JEDEC JESD47/20/22.

Suppliers

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Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H - IMYH200R075M1H - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H
IMYH200R075M1H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H IMYH200R075M1H
The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems. Summary of Features VDSS = 2000 V for high DC-link systems up to 1500 VDC Very low switching losses Innovative HCC package 14 mm pin to pin creepage 5.4 mm clearance distances Benchmark gate threshold voltage, VGS(th) = 4.5 V Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Improved humidity robustness Benefits High power density Excellent reliability Highest efficiency Ease of design Applications Energy Storage Systems EV charging Photovoltaic

The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, solar power optimizer, EV charging and energy storage systems.


Summary of Features

  • VDSS = 2000 V for high DC-link systems up to 1500 VDC
  • Very low switching losses
  • Innovative HCC package
  • 14 mm pin to pin creepage
  • 5.4 mm clearance distances
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance
  • Improved humidity robustness

Benefits

  • High power density
  • Excellent reliability
  • Highest efficiency
  • Ease of design

Applications

  • Energy Storage Systems
  • EV charging
  • Photovoltaic
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMYH200R075M1H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMYH200R075M1H
Polarity N-Channel; N
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