The IMW65R060M2H is a 650 V Silicon Carbide MOSFET in a PG-TO247-3 package, designed for high-efficiency power conversion applications such as SMPS, solar inverters, EV charging, and motor drives. It has a typical on-state resistance of 60 mΩ and a peak drain current rating of 96 A. The device features a gate threshold voltage of 4.5 V, ultra-low switching losses, and robust body diode operation under hard commutation. It supports a gate-source voltage range of -7 V to 23 V and operates with a maximum junction temperature of 175°C. The package includes .XT interconnection technology for enhanced thermal performance. The part is qualified according to relevant JEDEC tests.
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMW65R060M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H |
| Polarity | N-Channel; N |
