Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H IMW65R060M2H

Description
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features Excellent figures of merit (FOMs) Best in class RDS(on) High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGSoff=0) Best immunity against turn-on effects Improved package interconnect with .XT Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability Enables top efficiency and power density Ease-of-use Full compatibility with existing vendors Allows designs without fan or heatsink Applications 1-phase string inverter solutions Energy Storage Systems EV charging Power conversion Solid-State Circuit Breaker
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H - IMW65R060M2H - Infineon Technologies AG
    Infineon Technologies AG
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Description
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features Excellent figures of merit (FOMs) Best in class RDS(on) High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGSoff=0) Best immunity against turn-on effects Improved package interconnect with .XT Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability Enables top efficiency and power density Ease-of-use Full compatibility with existing vendors Allows designs without fan or heatsink Applications 1-phase string inverter solutions Energy Storage Systems EV charging Power conversion Solid-State Circuit Breaker
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H - IMW65R060M2H - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H
IMW65R060M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H IMW65R060M2H
The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages. Summary of Features Excellent figures of merit (FOMs) Best in class RDS(on) High robustness and overall quality Flexible driving voltage range Support for unipolar driving (VGSoff=0) Best immunity against turn-on effects Improved package interconnect with .XT Benefits Enables BOM savings Maximizes the system performance per $ Highest reliability Enables top efficiency and power density Ease-of-use Full compatibility with existing vendors Allows designs without fan or heatsink Applications 1-phase string inverter solutions Energy Storage Systems EV charging Power conversion Solid-State Circuit Breaker

The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.


Summary of Features

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGSoff=0)
  • Best immunity against turn-on effects
  • Improved package interconnect with .XT

Benefits

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Ease-of-use
  • Full compatibility with existing vendors
  • Allows designs without fan or heatsink

Applications

  • 1-phase string inverter solutions
  • Energy Storage Systems
  • EV charging
  • Power conversion
  • Solid-State Circuit Breaker
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMW65R060M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMW65R060M2H
Polarity N-Channel; N
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