The IGC033S101 is a 100 V enhancement-mode GaN transistor in a PG-VSON-6 package, measuring 3.3 mm by 5.0 mm, designed for high-efficiency switching in telecom, datacenter, and e-mobility applications. It features a drain-source on-state resistance of 2.4 mΩ, a continuous drain current of 76 A, a gate charge of 11 nC, and zero reverse recovery charge. The device is rated for industrial use with a junction temperature range of -40 °C to 150 °C and meets JEDEC JESD47, JESD22, and J-STD-020 qualification standards. Moisture sensitivity is rated MSL1.
The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
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CoolGaNTransistor 100 G3 in PQFN 3x5 2.4
| Infineon Technologies AG | RS Components, Ltd. | |
|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IGC033S101 | 559213 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGC033S101 | MOSFETs |
| Package Type | PG-VSON-6 | PG-VSON-6 |
