Infineon Technologies AG Power - Gallium nitride (GaN) - GaN transistors - IGC033S101 IGC033S101

Description
The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications. Summary of Features 100 V e-mode power transistor Bottom-side cooled package High switching frequency No reverse recovery charge Reverse conduction capability Low gate charge, low output charge Qualified according to JEDEC Benefits Best-in-class power density Highest efficiency Improved thermal management Enabling smaller and lighter designs Excellent reliability Lowering BOM cost Applications Audio amplifier solutions Low power BDC/BLDC motor drives up to 72 V Photovoltaic Telecommunication infrastructure
Request a Quote Datasheet
Description
The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications. Summary of Features 100 V e-mode power transistor Bottom-side cooled package High switching frequency No reverse recovery charge Reverse conduction capability Low gate charge, low output charge Qualified according to JEDEC Benefits Best-in-class power density Highest efficiency Improved thermal management Enabling smaller and lighter designs Excellent reliability Lowering BOM cost Applications Audio amplifier solutions Low power BDC/BLDC motor drives up to 72 V Photovoltaic Telecommunication infrastructure
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gallium nitride (GaN) - GaN transistors - IGC033S101 - IGC033S101 - Infineon Technologies AG
Neubiberg, Germany
Power - Gallium nitride (GaN) - GaN transistors - IGC033S101
IGC033S101
Power - Gallium nitride (GaN) - GaN transistors - IGC033S101 IGC033S101
The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications. Summary of Features 100 V e-mode power transistor Bottom-side cooled package High switching frequency No reverse recovery charge Reverse conduction capability Low gate charge, low output charge Qualified according to JEDEC Benefits Best-in-class power density Highest efficiency Improved thermal management Enabling smaller and lighter designs Excellent reliability Lowering BOM cost Applications Audio amplifier solutions Low power BDC/BLDC motor drives up to 72 V Photovoltaic Telecommunication infrastructure

The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.


Summary of Features

  • 100 V e-mode power transistor
  • Bottom-side cooled package
  • High switching frequency
  • No reverse recovery charge
  • Reverse conduction capability
  • Low gate charge, low output charge
  • Qualified according to JEDEC

Benefits

  • Best-in-class power density
  • Highest efficiency
  • Improved thermal management
  • Enabling smaller and lighter designs
  • Excellent reliability
  • Lowering BOM cost

Applications

  • Audio amplifier solutions
  • Low power BDC/BLDC motor drives up to 72 V
  • Photovoltaic
  • Telecommunication infrastructure
Supplier's Site Datasheet
MOSFETs - 559213 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
559213
MOSFETs 559213
CoolGaNTransistor 100 G3 in PQFN 3x5 2.4

CoolGaNTransistor 100 G3 in PQFN 3x5 2.4

Supplier's Site

Technical Specifications

  Infineon Technologies AG RS Components, Ltd.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IGC033S101 559213
Product Name Power - Gallium nitride (GaN) - GaN transistors - IGC033S101 MOSFETs
Package Type PG-VSON-6 PG-VSON-6
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