Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3G IPA032N06N3G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 068926-IPA032N06N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-31 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 84A (Tc) Gate-Source Threshold Voltage: 4V @ 118μA Max Gate Charge: 165nC @ 10V Max Input Capacitance: 13000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 068926-IPA032N06N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-31 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 84A (Tc) Gate-Source Threshold Voltage: 4V @ 118μA Max Gate Charge: 165nC @ 10V Max Input Capacitance: 13000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3G - 068926-IPA032N06N3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3G
068926-IPA032N06N3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3G 068926-IPA032N06N3G
Manufacturer: Infineon Technologies Win Source Part Number: 068926-IPA032N06N3G Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 41W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-31 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 84A (Tc) Gate-Source Threshold Voltage: 4V @ 118μA Max Gate Charge: 165nC @ 10V Max Input Capacitance: 13000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 068926-IPA032N06N3G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-31 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 84A (Tc)
Gate-Source Threshold Voltage: 4V @ 118μA
Max Gate Charge: 165nC @ 10V
Max Input Capacitance: 13000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 068926-IPA032N06N3G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA032N06N3G
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 41000 milliwatts
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