Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN08S7N024 IAUCN08S7N024

Description
Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. Summary of Features RDS(on) better than prior best Leading edge FOM (RDS(on) x Qg) Fast switching times (turn on/off) Low package resistance and inductance High avalanche current capability High SOA ruggedness Excellent thermal performance Extended qualification beyond AEC-Q101 Enhanced electrical testing MSL1 up to 260°C peak reflow 175°C operating temperature Benefits Very low conduction losses Superior switching performance Highest power density in 5x6mm package High power efficiency Small footprint & efficient cooling Increased design ruggedness Designed for Automotive robustness High quality production for Automotive Potential Applications HV to 48V DC-DC converter in electric vehicles 48V Systems 48V to 12V DC-DC converter 48V to 24V DC-DC converter 48V Motor Control (EPS, Braking, Suspension, HVAC, eTurbo) 48V Heating (catalyst/eCAT, PTC heater, windscreen de-icing) and other 48V Auxiliary loads 48V Electric Power Steering (EPS) 24V Electric Power Steering (EPS) 48V Pumps and Fans 48V Power Distribution 48V Battery Management System (BMS) and Battery Disconnect Light Electric Vehicles (traction inverter, charger) i.e. 2 and 3 wheelers
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Description
Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. Summary of Features RDS(on) better than prior best Leading edge FOM (RDS(on) x Qg) Fast switching times (turn on/off) Low package resistance and inductance High avalanche current capability High SOA ruggedness Excellent thermal performance Extended qualification beyond AEC-Q101 Enhanced electrical testing MSL1 up to 260°C peak reflow 175°C operating temperature Benefits Very low conduction losses Superior switching performance Highest power density in 5x6mm package High power efficiency Small footprint & efficient cooling Increased design ruggedness Designed for Automotive robustness High quality production for Automotive Potential Applications HV to 48V DC-DC converter in electric vehicles 48V Systems 48V to 12V DC-DC converter 48V to 24V DC-DC converter 48V Motor Control (EPS, Braking, Suspension, HVAC, eTurbo) 48V Heating (catalyst/eCAT, PTC heater, windscreen de-icing) and other 48V Auxiliary loads 48V Electric Power Steering (EPS) 24V Electric Power Steering (EPS) 48V Pumps and Fans 48V Power Distribution 48V Battery Management System (BMS) and Battery Disconnect Light Electric Vehicles (traction inverter, charger) i.e. 2 and 3 wheelers
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Datasheet
Datasheet Summary
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The IAUCN08S7N024 is an 80 V N-channel enhancement-mode MOSFET designed for automotive applications, housed in a PG-TDSON-8-34 package. It features a maximum continuous drain current of 165 A, a drain-source on-state resistance of 2.4 mΩ at 10 V gate voltage, and an operating junction temperature range of -55 °C to 175 °C. The device is qualified to AEC-Q101, certified for 100% avalanche testing, and supports MSL1 reflow conditions up to 260 °C. Thermal resistance from junction to case is 1.0 K/W. It complies with RoHS standards.

Datasheet Summary
Powered by GS/AI

The IAUCN08S7N024 is an 80 V N-channel enhancement-mode MOSFET designed for automotive applications, housed in a PG-TDSON-8-34 package. It features a maximum continuous drain current of 165 A, a drain-source on-state resistance of 2.4 mΩ at 10 V gate voltage, and an operating junction temperature range of -55 °C to 175 °C. The device is qualified to AEC-Q101, certified for 100% avalanche testing, and supports MSL1 reflow conditions up to 260 °C. Thermal resistance from junction to case is 1.0 K/W. It complies with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN08S7N024 - IAUCN08S7N024 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN08S7N024
IAUCN08S7N024
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN08S7N024 IAUCN08S7N024
Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. Summary of Features RDS(on) better than prior best Leading edge FOM (RDS(on) x Qg) Fast switching times (turn on/off) Low package resistance and inductance High avalanche current capability High SOA ruggedness Excellent thermal performance Extended qualification beyond AEC-Q101 Enhanced electrical testing MSL1 up to 260°C peak reflow 175°C operating temperature Benefits Very low conduction losses Superior switching performance Highest power density in 5x6mm package High power efficiency Small footprint & efficient cooling Increased design ruggedness Designed for Automotive robustness High quality production for Automotive Potential Applications HV to 48V DC-DC converter in electric vehicles 48V Systems 48V to 12V DC-DC converter 48V to 24V DC-DC converter 48V Motor Control (EPS, Braking, Suspension, HVAC, eTurbo) 48V Heating (catalyst/eCAT, PTC heater, windscreen de-icing) and other 48V Auxiliary loads 48V Electric Power Steering (EPS) 24V Electric Power Steering (EPS) 48V Pumps and Fans 48V Power Distribution 48V Battery Management System (BMS) and Battery Disconnect Light Electric Vehicles (traction inverter, charger) i.e. 2 and 3 wheelers

Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.


Summary of Features

  • RDS(on) better than prior best
  • Leading edge FOM (RDS(on) x Qg)
  • Fast switching times (turn on/off)
  • Low package resistance and inductance
  • High avalanche current capability
  • High SOA ruggedness
  • Excellent thermal performance
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature

Benefits

  • Very low conduction losses
  • Superior switching performance
  • Highest power density in 5x6mm package
  • High power efficiency
  • Small footprint & efficient cooling
  • Increased design ruggedness
  • Designed for Automotive robustness
  • High quality production for Automotive

Potential Applications

  • HV to 48V DC-DC converter in electric vehicles
  • 48V Systems
  • 48V to 12V DC-DC converter
  • 48V to 24V DC-DC converter
  • 48V Motor Control (EPS, Braking, Suspension, HVAC, eTurbo)
  • 48V Heating (catalyst/eCAT, PTC heater, windscreen de-icing) and other 48V Auxiliary loads
  • 48V Electric Power Steering (EPS)
  • 24V Electric Power Steering (EPS)
  • 48V Pumps and Fans
  • 48V Power Distribution
  • 48V Battery Management System (BMS) and Battery Disconnect
  • Light Electric Vehicles (traction inverter, charger) i.e. 2 and 3 wheelers
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUCN08S7N024
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN08S7N024
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.3 to 3.2 volts
rDS(on) 0.0024 ohms
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