The IMZA75R140M1H is a 750 V silicon carbide MOSFET in a PG-TO247-4 package, designed for high-efficiency power conversion in applications such as EV charging, solar inverters, and server SMPS. It has a typical on-resistance of 140 mΩ and a maximum continuous drain current of 116 A at 25°C case temperature. The device is avalanche-tested to 48 mJ single-pulse energy and rated for an operating junction temperature up to 175°C. It features a driver source pin for enhanced gate control and robustness against parasitic turn-on, with a confirmed thermal resistance suitable for industrial applications under JEDEC qualification standards.
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMZA75R140M1H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA75R140M1H |
| Polarity | N-Channel; N |
