Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA75R140M1H IMZA75R140M1H

Description
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. Summary of Features Highly robust 750 V technology Best-in-class RDS(on) x Qfr Excellent Ron x Qoss and Ron x QG Low Crss/Ciss together and high VGSth 100% avalanche tested .XT interconnection technology for best-in-class thermal performance Benefits Superior efficiency in hard switching Enables higher switching frequency Higher reliability Withstand bus voltages beyond 500 V Robustness against parasitic turn Unipolar driving Potential Applications Solid State Relay (SSR) Applications 1-phase string inverter solutions AC-DC power conversion for telecom infrastructure Energy Storage Systems EV charging Server power supply units (PSU)
Request a Quote Datasheet
Description
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. Summary of Features Highly robust 750 V technology Best-in-class RDS(on) x Qfr Excellent Ron x Qoss and Ron x QG Low Crss/Ciss together and high VGSth 100% avalanche tested .XT interconnection technology for best-in-class thermal performance Benefits Superior efficiency in hard switching Enables higher switching frequency Higher reliability Withstand bus voltages beyond 500 V Robustness against parasitic turn Unipolar driving Potential Applications Solid State Relay (SSR) Applications 1-phase string inverter solutions AC-DC power conversion for telecom infrastructure Energy Storage Systems EV charging Server power supply units (PSU)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA75R140M1H - IMZA75R140M1H - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA75R140M1H
IMZA75R140M1H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA75R140M1H IMZA75R140M1H
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. Summary of Features Highly robust 750 V technology Best-in-class RDS(on) x Qfr Excellent Ron x Qoss and Ron x QG Low Crss/Ciss together and high VGSth 100% avalanche tested .XT interconnection technology for best-in-class thermal performance Benefits Superior efficiency in hard switching Enables higher switching frequency Higher reliability Withstand bus voltages beyond 500 V Robustness against parasitic turn Unipolar driving Potential Applications Solid State Relay (SSR) Applications 1-phase string inverter solutions AC-DC power conversion for telecom infrastructure Energy Storage Systems EV charging Server power supply units (PSU)

The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.


Summary of Features

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG
  • Low Crss/Ciss together and high VGSth
  • 100% avalanche tested
  • .XT interconnection technology for best-in-class thermal performance

Benefits

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving

Potential Applications

  • Solid State Relay (SSR)

Applications

  • 1-phase string inverter solutions
  • AC-DC power conversion for telecom infrastructure
  • Energy Storage Systems
  • EV charging
  • Server power supply units (PSU)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMZA75R140M1H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMZA75R140M1H
Polarity N-Channel; N
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