The IMBG40R025M2H is a 400 V silicon carbide MOSFET designed for high-frequency switching and synchronous rectification in applications such as SMPS, solar inverters, and motor drives. It is packaged in a PG-TO263-7 surface-mount format with dimensions of 9.80 to 10.20 mm in width and 9.05 to 9.45 mm in length. The device features a typical on-state resistance of 25.4 mΩ at 25°C and 18 V gate voltage, a continuous drain current of 48 A at 100°C case temperature, and a gate charge of 36 nC. It includes a fast body diode with low reverse recovery charge, is 100% avalanche tested with single-pulse avalanche energy of 93 mJ, and supports unipolar gate driving from 0 V to 18 V. The package uses .XT interconnection technology for enhanced thermal performance, with a junction-to-case thermal resistance of 0.7 °C/W. The device is fully qualified according to JEDEC for industrial applications.
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.
Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.
Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IMBG40R025M2H |
| Product Name | Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMBG40R025M2H |
| Polarity | N-Channel; N |
