Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R045M2H IMT40R045M2H

Description
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers. Summary of Features Better FOMs compared to 650 V SiC MOSFETs Fast commutation robust diode with low Qfr Low RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs High design robustness Reduced EMI filtering Use in hard-switching topologies Applications Audio amplifier solutions Battery management systems (BMS) Motor Control Renewables Server power supply units (PSU)
  • Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R045M2H - IMT40R045M2H - Infineon Technologies AG
    Infineon Technologies AG
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Description
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers. Summary of Features Better FOMs compared to 650 V SiC MOSFETs Fast commutation robust diode with low Qfr Low RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs High design robustness Reduced EMI filtering Use in hard-switching topologies Applications Audio amplifier solutions Battery management systems (BMS) Motor Control Renewables Server power supply units (PSU)
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Datasheet
Datasheet Summary
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The IMT40R045M2H is a 400 V silicon carbide MOSFET designed for high-efficiency power conversion in applications such as SMPS, solar inverters, motor drives, and energy storage systems. It is housed in a PG-HSOF-8 package measuring 10.28 to 10.58 mm in length, 9.70 to 10.10 mm in width, and 11.48 to 11.88 mm in height. The device features a typical on-state resistance of 44.9 mΩ at 25°C, a continuous drain current of 30 A at 100°C, and a gate threshold voltage of 4.5 V. It is 100% avalanche tested and supports unipolar gate driving with recommended voltages from 0 V to 18 V. The thermal resistance from junction to case is 1 °C/W, and the part is fully qualified according to JEDEC for industrial applications.

Datasheet Summary
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The IMT40R045M2H is a 400 V silicon carbide MOSFET designed for high-efficiency power conversion in applications such as SMPS, solar inverters, motor drives, and energy storage systems. It is housed in a PG-HSOF-8 package measuring 10.28 to 10.58 mm in length, 9.70 to 10.10 mm in width, and 11.48 to 11.88 mm in height. The device features a typical on-state resistance of 44.9 mΩ at 25°C, a continuous drain current of 30 A at 100°C, and a gate threshold voltage of 4.5 V. It is 100% avalanche tested and supports unipolar gate driving with recommended voltages from 0 V to 18 V. The thermal resistance from junction to case is 1 °C/W, and the part is fully qualified according to JEDEC for industrial applications.

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Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R045M2H - IMT40R045M2H - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R045M2H
IMT40R045M2H
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R045M2H IMT40R045M2H
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements. Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers. Summary of Features Better FOMs compared to 650 V SiC MOSFETs Fast commutation robust diode with low Qfr Low RDS(on) temperature dependency Gate threshold voltage, VGS(th) = 4.5 V Support for unipolar driving (VGSoff=0) 100% avalanche tested High controllability of switching speed Low overshoot during high dV/dt operation .XT interconnection technology Best-in-class thermal performance Benefits High system efficiency High power density designs High design robustness Reduced EMI filtering Use in hard-switching topologies Applications Audio amplifier solutions Battery management systems (BMS) Motor Control Renewables Server power supply units (PSU)

The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance, whilst offering system cost improvements.

Developed to deliver outstanding levels of power density and system efficiency in 2- & 3-level hard- & soft-switching topologies.

Targeting power conversion in AI Server PSU, SMPS, motor control, renewables and energy storage, and Class-D amplifiers.


Summary of Features

  • Better FOMs compared to 650 V SiC MOSFETs
  • Fast commutation robust diode with low Qfr
  • Low RDS(on) temperature dependency
  • Gate threshold voltage, VGS(th) = 4.5 V
  • Support for unipolar driving (VGSoff=0)
  • 100% avalanche tested
  • High controllability of switching speed
  • Low overshoot during high dV/dt operation
  • .XT interconnection technology
  • Best-in-class thermal performance

Benefits

  • High system efficiency
  • High power density designs
  • High design robustness
  • Reduced EMI filtering
  • Use in hard-switching topologies

Applications

  • Audio amplifier solutions
  • Battery management systems (BMS)
  • Motor Control
  • Renewables
  • Server power supply units (PSU)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMT40R045M2H
Product Name Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMT40R045M2H
Polarity N-Channel; N
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