N-Channel 100V 64A (Tc) 39W (Tc) Through Hole PG-TO220-FP
Manufacturer: Infineon Technologies
Win Source Part Number: 776831-IPA045N10N3GX
Series: OptiMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Family Name: IPA045N10N3GXKSA1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: PG-TO220-FP
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.5V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs: 117nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8410pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 39W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.5 mOhm @ 64A, 10V
Alternative Parts (Cross-Reference): TK65A10N1,S4X(S; PSMN4R6-100XS,127; PSMN5R0-100XS; PSMN4R6-100XS;
Introduction Date: May 12, 2009
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
MOSFET N-CH 100V 64A TO220-FP Product overview: IPA045N10N3GXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 64A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 64A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA045N10N3GXKSA
MOSFET N-CH 100V 64A TO220-FP
MOSFET, N-CH, 100V, 64A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 64A TO220-FP
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 448-IPA045N10N3GXKSA1-ND | 776831-IPA045N10N3GXKSA1 | 278-IPA045N10N3GXKSA1 | IPA045N10N3GXKSA1 | 12AC9686 | IPA045N10N3GXKSA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA045N10N3GXKSA1 | 100V 64A TO220 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 100V, 64A, To-220Fp; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-220; TO-220-3 Full Pack | TO-220; SOT3 | Tube | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | TO-220; TO-220-3 Full Pack |
| PD | 39000 milliwatts | 39000 milliwatts | 39000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Packing Method | Tube; Tube | Tube | Tube; Tube |
