Infineon Technologies AG Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - IMCQ120R010M2H IMCQ120R010M2H

CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance. Summary of Features VDSS = 1200 V @Tvj = 25°C IDDC = 138 A @TC = 100°C RDS(on) = 10 mΩ @VGS = 18 V, Tvj = 25°C Very low switching losses Overload operation up to Tvj = 200°C Short circuit withstand time 2 µs Benchmark gate threshold voltage Robust against parasitic turn on Robust body diode for hard commutation .XT interconnection technology Benefits Outstanding thermal performance Increases energy efficiency Higher power density More compact and easier designs Lower TCO cost or BOM cost Applications EV charging Low voltage drives Photovoltaic Solid-State Circuit Breaker Uninterruptible power supplies (UPS)