N-channel Trench MOSFET for switching applications in a DFN2020MD-6 (SOT1220) package measuring 2 mm × 2 mm × 0.65 mm, with a drain-source voltage rating of 30 V, continuous drain current of 11 A at 25 °C, and on-state resistance of 53 mΩ to 72 mΩ at 10 V gate drive. It operates with a maximum junction temperature of 175 °C, features side wettable flanks for optical solder inspection, provides ESD protection exceeding 1 kV HBM, and is AEC-Q101 qualified.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 30V 4A (Ta), 11A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 4A (Ta), 11A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
N-Channel 30V 4A (Ta), 11A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6
MOSFET BUK6D72-30E/SOT1220/
MOSFET N-CH 30V 4A/11A 6DFN
MOSFET, AEC-Q101, N-CH, 30V, 11A, 15W ROHS COMPLIANT: YES
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK6D72-30EX | 1727-BUK6D72-30EXTR-ND | BUK6D72-30EX | BUK6D72-30EX | 17AH8848 |
| Product Name | 30 V, N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 30V, 11A, 15W Rohs Compliant Nexperia |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 30 volts | ||||
| IDSS | 11000 milliamps | ||||
| VGS(off) | 20 volts | ||||
| PD | 15 milliwatts |
