Nexperia B.V. Single FETs, MOSFETs BSP030,115

Description
N-Channel 30V 10A (Tc) 8.3W (Tc) Surface Mount SOT-223
Request a Quote Datasheet
Description
N-Channel 30V 10A (Tc) 8.3W (Tc) Surface Mount SOT-223
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - 568-6218-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
568-6218-2-ND
Single FETs, MOSFETs 568-6218-2-ND
N-Channel 30V 10A (Tc) 8.3W (Tc) Surface Mount SOT-223

N-Channel 30V 10A (Tc) 8.3W (Tc) Surface Mount SOT-223

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP030,115 - 1024422-BSP030,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP030,115
1024422-BSP030,115
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP030,115 1024422-BSP030,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1024422-BSP030,115 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 8.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 2.8V @ 1mA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 770pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 30 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024422-BSP030,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 8.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 1mA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 770pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 30 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSP030,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSP030,115
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSP030,115
MOSFET N-CH 30V 10A SOT223

MOSFET N-CH 30V 10A SOT223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 568-6218-2-ND 1024422-BSP030,115 BSP030,115
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP030,115 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223 TO-261-4, TO-261AA
V(BR)DSS 30 volts
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