N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm, using Trench MOSFET technology. It has a drain-source voltage rating of 60 V, continuous drain current of 10.6 A at 25 °C, and total power dissipation of 18.8 W. The junction temperature range extends to 175 °C, with side wettable flanks for optical solder inspection and ESD protection exceeding 2 kV HBM (class H2). It is AEC-Q101 qualified for automotive applications.
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6
N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6
N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6
MOSFET BUK6D77-60E/SOT1220/
MOSFET N-CH 60V 3.4A/10.6A 6DFN
MOSFET N-CH 60V 3.4A/10.6A 6DFN
MOSFET, AECQ101, N-CH, 60V, 10.6A, 18.8W; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; PowerRoHS Compliant: Yes
| Nexperia B.V. | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK6D77-60EX | 1727-BUK6D77-60EXDKR-ND | BUK6D77-60EX | BUK6D77-60EX | BUK6D77-60EX | 17AH8849 |
| Product Name | 60 V, N-channel Trench MOSFET | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aecq101, N-Ch, 60V, 10.6A, 18.8W; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 10600 milliamps | 3400 milliamps | 10600 milliamps | |||
| VGS(off) | 20 volts | |||||
| PD | 18.8 milliwatts | 2000 milliwatts |
