Nexperia B.V. 60 V, N-channel Trench MOSFET BUK6D77-60EX

Description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
  • 60 V, N-channel Trench MOSFET - BUK6D77-60EX - Nexperia B.V.
    Nexperia B.V.
  • Single FETs, MOSFETs - 1727-BUK6D77-60EXDKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6D77-60EXTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - 1727-BUK6D77-60EXCT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - BUK6D77-60EX - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK6D77-60EX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Aecq101, N-Ch, 60V, 10.6A, 18.8W; Transistor Polarity Nexperia - 17AH8849 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, N-channel Trench MOSFET - BUK6D77-60EX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, N-channel Trench MOSFET
BUK6D77-60EX
60 V, N-channel Trench MOSFET BUK6D77-60EX
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Extended temperature range Tj = 175 °C Side wettable flanks for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Extended temperature range Tj = 175 °C
  • Side wettable flanks for optical solder inspection
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK6D77-60EXDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D77-60EXDKR-ND
Single FETs, MOSFETs 1727-BUK6D77-60EXDKR-ND
N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6D77-60EXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D77-60EXTR-ND
Single FETs, MOSFETs 1727-BUK6D77-60EXTR-ND
N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK6D77-60EXCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK6D77-60EXCT-ND
Single FETs, MOSFETs 1727-BUK6D77-60EXCT-ND
N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 3.4A (Ta), 10.6A (Tc) 2W (Ta), 18.8W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - BUK6D77-60EX - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BUK6D77-60EX
Single FETs, MOSFETs BUK6D77-60EX
MOSFET N-CH 60V 3.4A/10.6A 6DFN

MOSFET N-CH 60V 3.4A/10.6A 6DFN

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BUK6D77-60EX
MOSFET BUK6D77-60EX
MOSFET BUK6D77-60E/SOT1220/ SOT1220

MOSFET BUK6D77-60E/SOT1220/SOT1220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK6D77-60EX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK6D77-60EX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK6D77-60EX
MOSFET N-CH 60V 3.4A/10.6A 6DFN

MOSFET N-CH 60V 3.4A/10.6A 6DFN

Supplier's Site
Mosfet, Aecq101, N-Ch, 60V, 10.6A, 18.8W; Transistor Polarity Nexperia - 17AH8849 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aecq101, N-Ch, 60V, 10.6A, 18.8W; Transistor Polarity Nexperia
17AH8849
Mosfet, Aecq101, N-Ch, 60V, 10.6A, 18.8W; Transistor Polarity Nexperia 17AH8849
MOSFET, AECQ101, N-CH, 60V, 10.6A, 18.8W; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; PowerRoHS Compliant: Yes

MOSFET, AECQ101, N-CH, 60V, 10.6A, 18.8W; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.059ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; PowerRoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK6D77-60EX 1727-BUK6D77-60EXDKR-ND BUK6D77-60EX BUK6D77-60EX BUK6D77-60EX 17AH8849
Product Name 60 V, N-channel Trench MOSFET Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, Aecq101, N-Ch, 60V, 10.6A, 18.8W; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
IDSS 10600 milliamps 3400 milliamps 10600 milliamps
VGS(off) 20 volts
PD 18.8 milliwatts 2000 milliwatts
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