Nexperia B.V. 30 V, single P-channel Trench MOSFET BUK6D210-60EX

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

• Trench MOSFET technology
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection

Applications

• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portable devices
• Hard disk and computing power management

N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325292-BUK6D210-60EX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W, 15W (Tc)
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 6-UDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-8654-2,934660745115,1727-8654-1,1727-8654-6
Base Product Number: BUK6D210
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant