Nexperia B.V. 30 V, single P-channel Trench MOSFET BUK6D210-60EX

Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
Request a Quote Datasheet
Description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, single P-channel Trench MOSFET - BUK6D210-60EX - Nexperia B.V.
Nijmegen, Netherlands
30 V, single P-channel Trench MOSFET
BUK6D210-60EX
30 V, single P-channel Trench MOSFET BUK6D210-60EX
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Trench MOSFET technology
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Tin-plated 100 % solderable side pads for optical solder inspection

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portable devices
  • Hard disk and computing power management
Supplier's Site Datasheet
Singapore
60V 2.1A 5.7A MOSFET Transistor
278-BUK6D210-60EX
60V 2.1A 5.7A MOSFET Transistor 278-BUK6D210-60EX
MOSFET N-CH 60V 2.1A/5.7A 6DFN Product overview: BUK6D210-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.1A, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.1A, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK6D210-60EX can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 2.1A/5.7A 6DFN Product overview: BUK6D210-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.1A, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.1A, 5.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK6D210-60EX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325292-BUK6D210-60EX - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325292-BUK6D210-60EX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325292-BUK6D210-60EX
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1325292-BUK6D210-60E X Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Reel - TR Standard Package: 3,000 Mounting: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 2.1A, 5.7A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 2W, 15W (Tc) Supplier Device Package: DFN2020MD-6 Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) Case / Package: 6-UDFN Exposed Pad ECCN: EAR99 Fake Threat In the Open Market: 71 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: 1727-8654-2,93466074 5115,1727-8654-1,172 7-8654-6 Base Product Number: BUK6D210 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: ROHS3 Compliant

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1325292-BUK6D210-60EX
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Reel - TR
Standard Package: 3,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 2.1A, 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W, 15W (Tc)
Supplier Device Package: DFN2020MD-6
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: 6-UDFN Exposed Pad
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 1727-8654-2,934660745115,1727-8654-1,1727-8654-6
Base Product Number: BUK6D210
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8654-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8654-2-ND
Single FETs, MOSFETs 1727-8654-2-ND
N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8654-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8654-1-ND
Single FETs, MOSFETs 1727-8654-1-ND
N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Single FETs, MOSFETs - 1727-8654-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-8654-6-ND
Single FETs, MOSFETs 1727-8654-6-ND
N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

N-Channel 60V 2.1A (Ta), 5.7A (Tc) 2W (Ta), 15W (Tc) Surface Mount DFN2020MD-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK6D210-60EX - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK6D210-60EX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK6D210-60EX
MOSFET N-CH 60V 2.1A/5.7A 6DFN

MOSFET N-CH 60V 2.1A/5.7A 6DFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET BUK6D210-60E/SOT1220 /SOT1220

MOSFET BUK6D210-60E/SOT1220/SOT1220

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK6D210-60EX 278-BUK6D210-60EX 1325292-BUK6D210-60EX 1727-8654-2-ND BUK6D210-60EX BUK6D210-60EX
Product Name 30 V, single P-channel Trench MOSFET 60V 2.1A 5.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Enhancement Enhancement
Package Type SOT1220 Tape & Reel (TR) SOT3; 6-UDFN Exposed Pad 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Polarity N-Channel N-Channel N-Channel
V(BR)DSS 60 volts
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